Mahmoud El Nokali

  • (1998) Outstanding Teacher in Electrical Engineering Award.
  • (1996) Outstanding Professor Award.
  • (1990) Outstanding Teacher in Electrical Engineering Award.
  • (1989) Outstanding Teacher in Electrical Engineering Award.
  • (1988) University of Pittsburgh Chancellor's Distinguished Teaching Award.
  • (1988) Outstanding Teacher in Electrical Engineering Award.
  • (1987) Outstanding Teacher in Electrical Engineering Award.
  • (1987) Outstanding Research Publication in Electrical Engineering.
  • (1986) The Beitle Veltri Memorial Engineering Teaching Award.
  • (1985 - 1986) University of Pittsburgh HKN Chapter Award for E. E. Professor of the year.
  • (1984 - 1985) University of Pittsburgh HKN Chapter Award for Excellence in Teaching.
  • (1983 - 1984) University of Pittsburgh HKN Chapter Award for Outstanding Electrical Engineering Professor.
  • (1982 - 1983) University of Pittsburgh HKN Award for Outstanding New Teacher.
  • (1980 - 1981) Natural Sciences and Engineering Research Council of Canada (NSERC) Post Doctoral Fellowship.
  • (1977 - 1980) Bourse d'excellence de l'Enseignement superieur (Gouvernement du Quebec).
  • (1976 - 1978) National Research Council of Canada (NRC) Postgraduate Scholarship.
  • (1967 - 1972) Alexandria University Undergraduate Scholarship.

  • PhD, Electrical Engineering, McGill University, 1980
  • MS in Engineering in Electircal Engineering, McGill University, Montreal, 1976
  • BE, Electrical Engineering, Alexandria University, 1972

  • Ryu, S., Lee, M., Hajji, M.A., Ahn, H., Han, D., & El Nokali, M. (2008). A transient model for insulated gate bipolar transistors (IGBTs). INTERNATIONAL JOURNAL OF ELECTRONICS, 95(4), 399-409.Taylor & Francis. doi: 10.1080/00207210801996162.
  • Afzal, B., Zahabi, A., Amirabadi, A., Koolivand, Y., Afzali-Kusha, A., & El Nokali, M. (2005). Analytical model for C-V characteristic of fully depleted SOI-MOS capacitors. SOLID-STATE ELECTRONICS, 49(8), 1262-1273.Elsevier. doi: 10.1016/j.sse.2005.06.006.
  • Hashemi, P., Behnam, A., Fathi, E., Afzali-Kusha, A., & El Nokali, M. (2005). 2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET. SOLID-STATE ELECTRONICS, 49(8), 1341-1346.Elsevier. doi: 10.1016/j.sse.2005.06.011.
  • Chamas, I., & Nokali, M.A.E. (2004). Automated PSpice Simulation as an Effective Design Tool in Teaching Power Electronics. IEEE Transactions on Education, 47(3), 415-421.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/te.2004.825509.
  • Kang, W., Ahn, H., & Nokali, M.A.E. (2004). A Parameter Extraction Algorithm for an IGBT Behavioral Model. IEEE Transactions on Power Electronics, 19(6), 1365-1371.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/tpel.2004.836635.
  • Luo, Z., Ahn, H., & Nokali, M.A.E. (2004). A Thermal Model for Insulated Gate Bipolar Transistor Module. IEEE Transactions on Power Electronics, 19(4), 902-907.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/tpel.2004.830089.
  • Ahn, H.K., El-Nokali, M., & Han, D.Y. (2003). An efficient algorithm for optimizing the electrical performance of HBTs. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 16(4), 353-365.Wiley. doi: 10.1002/jnm.504.
  • Bolouki, S., Maddah, M., Afzali-Kusha, A., & El Nokali, M. (2003). A unified I-V model for PD/FD SOI MOSFETs with a compact model for floating body effects. SOLID-STATE ELECTRONICS, 47(11), 1909-1915.Elsevier. doi: 10.1016/S0038-1101(03)00259-4.
  • Hwang, K.C., Ahn, H., Han, D.Y., & El Nokali, M. (2001). A fast numerical algorithm for heterojunction structures. INTERNATIONAL JOURNAL OF ELECTRONICS, 88(11), 1151-1159.Taylor & Francis. doi: 10.1080/00207210110085887.
  • Oh, H.S., & El Nokali, M. (2001). A new IGBT behavioral model. SOLID-STATE ELECTRONICS, 45(12), 2069-2075.Elsevier. doi: 10.1016/S0038-1101(01)00149-6.
  • Won, C.S., Ahn, H., Han, D.Y., & Nokali, M.A.E. (1999). D.C. characteristic of MESFETs at High Temperatures. Solid-State Electronics, 43(3), 537-542.Elsevier. doi: 10.1016/s0038-1101(98)00308-6.
  • Kasemsuwan, V., & El nokali, M. (1997). A High Frequency Model for High Electron Mobility Transistors. IEEE Transactions on Microwave Theory and Techniques, 45(3), 420-427.
  • Kasemsuwan, V., & Nokali, M.A.E. (1997). A microwave model for high electron mobility transistors. IEEE Transactions on Microwave Theory and Techniques, 45(3), 420-427.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/22.563342.
  • Adhikari, N., & Nokali, M.E. (1996). Investigation of the importance of high-level injection in abrupt HBTs. Solid-State Electronics, 39(7), 1021-1025.Elsevier. doi: 10.1016/0038-1101(95)00399-1.
  • Ahn, H., & Nokali, M.A.E. (1996). A physically based approach for the calculation of the scattering parameters in high electron mobility transistors. International Journal of Electronics, 81(2), 149-158.Taylor & Francis. doi: 10.1080/002072196136814.
  • Ahn, H., & Nokali, M.A.E. (1995). Inverse modeling and its application in the design of high electron mobility transistors. IEEE Transactions on Electron Devices, 42(4), 598-604.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.372060.
  • Ahn, H., & Nokali, M.E. (1995). A charge based capacitance model for high electron mobility transistors. Solid-State Electronics, 38(4), 943-945.Elsevier. doi: 10.1016/0038-1101(94)00208-w.
  • GUPTA, R., & ELNOKALI, M. (1995). A MODEL FOR DUAL-CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTORS. SOLID-STATE ELECTRONICS, 38(1), 51-57.Elsevier. doi: 10.1016/0038-1101(94)E0069-Q.
  • KASEMSUWAN, V., & NOKALI, M.E. (1995). A DC model for fully-depleted SOI MOSFETs. International Journal of Electronics, 79(3), 281-292.Taylor & Francis. doi: 10.1080/00207219508926270.
  • Ahn, H., & Nokali, M.E. (1994). An analytical model for high electron mobility transistors. IEEE Transactions on Electron Devices, 41(6), 874-878.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.293295.
  • AFZALI-KUSHAA, A., & EL-NOKALI, M. (1993). Modelling the MOS transistor. International Journal of Electronics, 74(2), 213-229.Taylor & Francis. doi: 10.1080/00207219308925828.
  • Dong, X., & Nokali, M.E. (1993). Two-dimensional computer analysis of GaAs MESFETs. Solid-State Electronics, 36(4), 547-552.Elsevier. doi: 10.1016/0038-1101(93)90265-r.
  • Zhang, Y., & El nokali, M. (1993). A Hydrodynamic Simulator for Two-valley Semiconductor Devices. Special Issue of COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 12(4), 487-497.
  • Zhang, Y., & Nokali, M.E. (1993). A hydrodynamic transport model and its applications in semiconductor device simulation. Solid-State Electronics, 36(12), 1689-1696.Elsevier. doi: 10.1016/0038-1101(93)90215-c.
  • Afzali-Kushaa, A., & Nokali, M.E. (1992). Modeling subthreshold capacitances of MOS transistors. Solid-State Electronics, 35(1), 45-49.Elsevier. doi: 10.1016/0038-1101(92)90302-s.
  • Kushaa, A., & El nokali, M. (1992). Modelling Subthreshold Capacitances in MOS Transistors. Solid State Electronics, 47(2), 213-229.
  • XIA, Q., & NOKALI, M.E. (1991). MODFET DC model based on a new velocity-electric field characteristic. International Journal of Electronics, 71(1), 55-66.Taylor & Francis. doi: 10.1080/00207219108925458.
  • Gharabagi, R., & El-Nokali, M.A. (1990). A charge-based model for short-channel MOS transistor capacitances. IEEE Transactions on Electron Devices, 37(4), 1064-1073.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.52443.
  • Gharabagi, R., & Nokali, M.E. (1990). An analytical model for the capacitances in short-channel MOSFETs. Solid-State Electronics, 33(2), 235-241.Elsevier. doi: 10.1016/0038-1101(90)90162-8.
  • GHARABAGI, R., & NOKALI, M.E. (1990). Quasi-static model for the capacitances in short-channel MOSFETs. International Journal of Electronics, 68(2), 181-193.Taylor & Francis. doi: 10.1080/00207219008921159.
  • Xia, Q., & Nokali, M.E. (1990). An analytical d.c. model for MODFETs based on a new three-piece velocity-electric field characteristic. Solid-State Electronics, 33(9), 1179-1187.Elsevier. doi: 10.1016/0038-1101(90)90097-x.
  • Banna, M., & El nokali, M. (1989). A Quasi-Two-Dimensional Model for Small-Geometry MOSFETs Including the Source/Drain Resistances. International Journal of Electronics, 66, 589-600.
  • Banna, M., & El nokali, M. (1989). A Simple Analytical Model for Hot-Carrier MOSFETs. IEEE Transactions on Electron Devices, 36(4), 979-986.
  • Banna, M.E., & Nokali, M.E. (1989). A self‐consistent model for short‐channel mosfets. International Journal of Numerical Modelling Electronic Networks Devices and Fields, 2(2), 81-92.Wiley. doi: 10.1002/jnm.1660020204.
  • BANNA, M.E., & NOKALI, M.E. (1989). A quasi-two-dimensional model for small-geometry MOSFETs including the source/drain resistances. International Journal of Electronics, 66(4), 585-595.Taylor & Francis. doi: 10.1080/00207218908925413.
  • El-Banna, M., & El-Nokali, M. (1989). A simple analytical model for hot-carrier MOSFETs. IEEE Transactions on Electron Devices, 36(5), 979-986.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/16.299681.
  • Gharabagi, R., & Nokali, M.E. (1989). A model for the intrinsic gate capacitances of short channel MOSFETs. Solid-State Electronics, 32(1), 57-63.Elsevier. doi: 10.1016/0038-1101(89)90048-8.
  • Banna, M.E., & Nokali, M.E. (1988). A pseudo-two-dimensional analysis of short channel MOSFETs. Solid-State Electronics, 31(2), 269-274.Elsevier. doi: 10.1016/0038-1101(88)90141-4.
  • LI, W., & ELNOKALI, M. (1988). CMOS LATCHUP MODELING - A NEW APPROACH. INTERNATIONAL JOURNAL OF ELECTRONICS, 64(2), 269-282.Taylor & Francis. doi: 10.1080/00207218808962801.
  • Escourrou, J., Delvaux, M., & el Nokali, M. (1987). [The laser and its uses in gastroenterology]. Soins Chir, (81), 21-24.
  • WEI, L., & ELNOKALI, M. (1987). A NEW MODEL FOR CMOS LATCH-UP. SOLID-STATE ELECTRONICS, 30(8), 885-887.Elsevier. doi: 10.1016/0038-1101(87)90018-9.
  • WEI, L., & ELNOKALI, M. (1987). TRANSIENT ANALYSIS FOR A NEW CMOS LATCHUP MODEL. SOLID-STATE ELECTRONICS, 30(12), 1331-1339.Elsevier. doi: 10.1016/0038-1101(87)90060-8.
  • Banna, M.E., & Nokali, M.E. (1986). On the transient response of a circular transducer. Wave Motion, 8(3), 235-241.Elsevier. doi: 10.1016/s0165-2125(86)80046-4.
  • Miranda, H., & El nokali, M. (1986). A Simple Two Sections Model for Short Channel MOS Transistors in Saturation. International Journal of Electronics, 61(4), 49-458.
  • MIRANDA, H., & NOKALI, M.E. (1986). Simple two-sections model for short channel MOS transistors in saturation. International Journal of Electronics, 61(4), 449-458.Taylor & Francis. doi: 10.1080/00207218608920887.
  • Nokali, M.E., & Miranda, H. (1986). A simple model for the MOS transistor in saturation. Solid-State Electronics, 29(6), 591-596.Elsevier. doi: 10.1016/0038-1101(86)90139-5.
  • Nokali, M.A.E. (1985). Theory of the p+n Diode SAW Storage Correlator in the Flash Mode. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 32(5), 728-733.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1985.31657.
  • Nokali, M.A.E., & Adler, E.L. (1984). Analysis of the Schottky Diode Storage Correlator in the Flash-Mode. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 31(1), 5-10.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1984.31454.
  • El-Nokali, M., & Adler, E.L. (1980). A Modified Theory for SAW Memory Correlators. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 27(1), 38-41.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1980.31141.
  • El-Nokali, M., & Adler, E.L. (1979). Charge storage in s.a.w. memory correlators. Electronics Letters, 15(11), 323-324.Institution of Engineering and Technology (IET). doi: 10.1049/el:19790229.
  • Nokali, M.E., & Adler, E.J. (1977). A Simplified Theory for Semiconductor Coupled Surface Wave Convolvers. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 24(3), 218-221.Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/t-su.1977.30932.

  • Shin, H., Kasemsuwan, V., Ahn, H., El Nokali, M., & Han, D.Y. (2006). Electrical analysis of step-up multi-layered piezoelectric transformer. In JOURNAL OF ELECTROCERAMICS, 17(2-4), (pp. 585-590).Springer Nature. doi: 10.1007/s10832-006-0471-3.
  • Maddah, M., Bolouki, S., Afzali-Kusha, A., & Nokali, M.E. (2002). A Compact Modeling of Drain Current in PD/FD SOI MOSFETs. In The 14th International Conference on Microelectronics,, 2002-January, (pp. 75-78).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/icm-02.2002.1161500.
  • Kasemsuwan, V., Ahn, H., & El Nokali, M. (1997). High frequency model for high electron mobility transistors. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials, 1, (pp. 480-482).
  • Ahn, H., & El Nokali, M.A. (1995). Microwave model for high electron mobility transistors. In Biennial University/Government/Industry Microelectronics Symposium - Proceedings, (pp. 182-186).
  • Gupta, R., & El Nokali, M. (1994). Small signal model for dual channel high electron mobility transistors. In Midwest Symposium on Circuits and Systems, 1, (pp. 678-681).
  • Casey, M., & El Nokali, M. (1993). Analytical delay model for BiCMOS inverters. In 1993 University/Government/Industry Microelectronics Symposium, (pp. 131-136).
  • Dong, X., Zhang, Y., & Nokali, M.E. (1992). Modeling and simulation of GaAs MESFETs. In [1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 1992-August, (p. 1241-1244 vol.2).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/mwscas.1992.271047.
  • El-Banna, M., & Nokali, M.E. (1992). Effect of lateral-field distribution on hot-carrier analysis in short-channel MOSFETs. In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (p. 799-802 vol.2).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/mwscas.1991.251992.
  • Kushaa, A.A., & Nokali, M.E. (1992). A CAD model for MOS transistors valid in all regions of operation. In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (p. 364-367 vol.1).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/mwscas.1991.252172.
  • Saleh, M., & El-Nokali, M. (1992). A DC model for the high electron mobility transistor (HEMT). In [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, (p. 360-363 vol.1).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/mwscas.1991.252171.
  • Saleh, M., & Nokali, M.E. (1992). A small-signal equivalent circuit for the high electron mobility transistor. In [Proceedings] 1992 IEEE International Symposium on Circuits and Systems, 3, (p. 1364-1367 vol.3).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/iscas.1992.230250.
  • El-Nokali, M., & Afzali-Kushaa, A. (1991). A subthreshold model for the analysis of MOS IC's. In Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, (pp. 169-172).
  • Saleh, M., & El-Nokali, M. (1991). A DC model for the HEMT including the effect of parasitic conduction. In Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, (pp. 164-168).
  • Gharabagi, R., & El Nokali, M. (1989). Analytical model for short-channel MOSFET capacitances. (pp. 193-198).
  • El Banna, M., & El Nokali, M. (1986). NUMERICAL EVALUATION OF THE TRANSIENT PRESSURE OF A CIRCULAR TRANSDUCER USING THE FFT. In Modeling and Simulation, Proceedings of the Annual Pittsburgh Conference, 17(pt 4), (pp. 1341-1345).
  • Miranda, H., & El Nokali, M. (1986). SIMPLE MODEL FOR SHORT CHANNEL MOSFETS IN SATURATION. In Modeling and Simulation, Proceedings of the Annual Pittsburgh Conference, 17(pt 4), (pp. 1307-1310).
  • Nokali, M.A.E. (1984). Analysis of the Gap-Coupled P-N-Diode Array/LiNbO3Storage Correlator in the Flash Mode. In IEEE 1984 Ultrasonics Symposium, 1984-November, (pp. 147-151).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/ultsym.1984.198280.
  • Nokali, M.E., & Adler, E.L. (1983). Analysis of the SAW Schottky Diode Storage Correlator in the Flash-Mode. In 1983 Ultrasonics Symposium, 1, (pp. 387-391).Institute of Electrical and Electronics Engineers (IEEE). doi: 10.1109/ultsym.1983.198080.
Research Interests
Electronics, sensors and digital hardware Condensed matter physics Nanotechnology Electrical engineering Communications engineering Classical physics