Pitt | Swanson Engineering
El Nokali, Mahmoud
Electrical and Computer Engineering
El Nokali, Mahmoud
Faculty
Associate Professor
Office: 1238D Benedum Hall
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PhD in Electrical Engineering, McGill University, 1980

MS in Engineering in Electrical Engineering, McGill University, 1976

BE in Electrical Engineering, Alexandria University, 1972

Computer aided design

Microelectronics

Power electronics

Semiconductor device modeling

Surface acoustic wave devices

(1998) Outstanding Teacher in Electrical Engineering Award.

(1996) Outstanding Professor Award.

(1990) Outstanding Teacher in Electrical Engineering Award.

(1989) Outstanding Teacher in Electrical Engineering Award.

(1988) Outstanding Teacher in Electrical Engineering Award.

(1988) University of Pittsburgh Chancellor's Distinguished Teaching Award.

(1987) Outstanding Research Publication in Electrical Engineering.

(1987) Outstanding Teacher in Electrical Engineering Award.

(1986) The Beitle Veltri Memorial Engineering Teaching Award.

(1985) University of Pittsburgh HKN Chapter Award for E. E. Professor of the year.

(1984) University of Pittsburgh HKN Chapter Award for Excellence in Teaching.

(1983) University of Pittsburgh HKN Chapter Award for Outstanding Electrical Engineering Professor.

(1982) University of Pittsburgh HKN Award for Outstanding New Teacher.

(1980) Natural Sciences and Engineering Research Council of Canada (NSERC) Post Doctoral Fellowship.

(1977) Bourse d'excellence de l'Enseignement superieur (Gouvernement du Quebec).

(1976) National Research Council of Canada (NRC) Postgraduate Scholarship.

(1967) Alexandria University Undergraduate Scholarship.

Ryu, S., Hajji, H., Ahn, H.K., and El nokali, M., 2008, "A Transient Model for Insulated Gate Bipolar Transistor," International Journal of Electronics, vol.95, pp. 399-409.

Afzal, B., Kusha, A., and El nokali, M., 2005, "Efficient Power Model for Crossbar Interconnects," International Symposium on Circuits and Systems (ISCAS), pp. 5858-5861, Kobe, Japan.

Afzal, B., Zahabi, A., Amirabadi, A., Koolivand, Y., Kusha, A., and El nokali, M., 2005, "Analytical Model for C-V Characteristic of Fully-Depleted SOI-MOS Capacitors," Solid State Electronics, vol.49, no.8, pp. 1262-1273.

Hashemi, P., Fathi, E., Behnam, A., Kusha, A., and El nokali, M., 2005, "2-D Modeling of Potential Distribution and Threshold Voltage of Short Channel Fully Depleted Dual Material Gate SOI MESFET," Solid State Electronics, vol.49, no.8, pp. 1341-1346.

Chamas, I., and El nokali, M., 2004, "Automated PSPICE Simulation as an Effective Design Tool in Teaching Power Electronics," IEEE Transactions on Education, vol.47, no.3, pp. 415-421.

Kang, W., Ahn, H.K., and El nokali, M., 2004, "A Parameter Extraction Algorithm for an IGBT Behavioral Model," IEEE Transactions on Power Electronics, vol.19, no.6, pp. 1365-1371.

Luo, Z., Ahn, H.K., and El nokali, M., 2004, "A Thermal Model for Insulated Gate Bipolar Transistor," IEEE Transactions on Power Electronics, vol.19, no.4, pp. 902-907.

Ahn, H.K., El nokali, M., and Han, D.Y., 2003, "An Efficient Algorithm for Optimizing the Electrical Performance of HBTs," International Journal of Numerical Modeling, no.16, pp. 353-365.

Maddah, M., Bolouki, S., Kushaa, A., and El nokali, M., 2003, "A Unified I-V Model for PD/FD SOI MOSFET with a Compact Model for Floating Body Effects," Solid State Electronics, pp. 1909-1915.

Maddah, M., Bolouki, S., Kusha, A., and El nokali, M., 2002, "A Compact Model for Drain Current in PD/FD SOI MOSFETs," 14th International Conference on Microelectronics, pp. 75-78, Beirut, Lebanon.

Hwang, K.C., Ahn, H.K., and El nokali, M., 2001, "A Fast Numerical Algorithm for Heterojunction Structures," International Journal of Electronics, vol.88, no.11, pp. 1151-1159.

Oh, H.S., and El nokali, M., 2001, "A DC model for Insulated Gate Bipolar Transistors," Modeling and Simulation Conference, pp. 213-215, Pittsburgh, PA.

Oh, H.S., and El nokali, M., 2001, "A New IGBT Behavioral Model," Solid State Electronics, vol.45, no.12, pp. 2069-2075.

Won, C.S., Ahn, H.K., Han, D.Y., and El nokali, M., 1999, "DC Characteristic of MESFETs at High Temperatures," Solid State Electronics, vol.43, pp. 537-542.

Kasemsuwan, V., Ahn, H., and El nokali, M., 1997, "A Frequency Model for High Electron Mobility Transistors," 5th International Conference on Properties and Applications of Dielectric Materials, pp. 480-483, Seoul, South Korea.

Kasemsuwan, V., and El nokali, M., 1997, "A High Frequency Model for High Electron Mobility Transistors," IEEE Transactions on Microwave Theory and Techniques, vol.45, no.3, pp. 420-427.

Adhikari, N., and El nokali, M., 1996, "Investigation of the Importance of High-Level Injection in Abrupt HBTs," Solid State Electronics, vol.39, no.7, pp. 1021-1025.

Ahn, H.K., and El nokali, M., 1996, "A Physically Based Approach for the Calculation of the Scattering Parameters in High Electron Mobility Transistors," International Journal of Electronics, vol.81, no.2, pp. 149-158.

Ahn, H., and El nokali, M., 1995, "A Microwave Model for High Electron Mobility Transistors," Eleventh Biennial University Government Industry Microelectronics Symposium, pp. 182-186, Austin, TX.

Ahn, H., Kasemsuwan, V., and El nokali, M., 1995, "79. H. Ahn, V. Kasemsuwan and M. El Nokali, "Microwave Characteristics of High Electron Mobility Transistors," International Semiconductor Device Research Symposium, pp. 239-241, Charlottesville, Virginia.

Ahn, H.K., and El nokali, M., 1995, "A Charge Based Capacitance Model for High Electron Mobility Transistors," Solid State Electronics, vol.38, no.4, pp. 943-945.

Ahn, H.K., and El nokali, M., 1995, "Inverse Modeling and Its Application to the Design of High Electron Mobility Transistors," IEEE Transactions on Electron Devices, vol.42, no.4, pp. 598-604.

Gupta, R., and El nokali, M., 1995, "A Model for Dual Channel High Electron Mobility Transistors," Solid State Electronics, vol.38, no.1, pp. 51-57.

Kasemsuwan, V., and El nokali, M., 1995, "A DC Model for Fully Depleted SOI MOSFETS," International Journal of Electronics, vol.79, no.3, pp. 281-292.

Ahn, H.K., and El nokali, M., 1994, "An Analytical Model for High Electron Mobility Transistors," IEEE Transactions on Electron Devices, vol.41, no.6, pp. 874-878.

Gupta, R., and El nokali, M., 1994, "A Small Signal Equivalent Circuit for the Dual High Electron Mobility Transistor," 37th Midwest Symposium on Circuits and Systems, pp. 182-186, Lafayette, Louisiana.

Ahn, H., and El nokali, M., 1993, "A DC and Small Signal Model for High Electron Mobility Transistors," Tenth Biennial University/Government/Industry Microelectronics Symposium, pp. 151-155, North Carolina.

Ahn, H., and El nokali, M., 1993, "An Analytical Gate Capacitance Model for High Electron Mobility Transistors," International Semiconductor Device Research Symposium, pp. 535-538, Charlottesville, Virginia.

Casey, M.P., and El nokali, M., 1993, "An Analytical Delay Model for BiCMOS Inverters," Tenth Biennial University/Government/Industry Microelectronics Symposium, pp. 131-136, North Carolina.

Dong, X., and El nokali, M., 1993, "Two-Dimensional Computer Analysis of GaAs MESFETs," Solid State Electronics, vol.36, no.4, pp. 547-552.

Kushaa, A., and El nokali, M., 1993, "On Modeling the MOS Transistor," International Journal of Electronics, vol.74, no.2, pp. 213-229.

Zhang, Y., and El nokali, M., 1993, "A Hydrodynamic Simulator for Two-valley Semiconductor Devices," Special Issue of COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, vol.12, no.4, pp. 487-497.

Zhang, Y., and El nokali, M., 1993, "A Hydrodynamic Transport Model and Its Applications in Semiconductor Device Simulation," Solid State Electronics, vol.36, no.12, pp. 1689-1696.

Zhang, Y., and El nokali, M., 1993, "DYNA - A Hydrodynamic Simulator for Two-valley Semiconductor Devices," Ninth International Conference on Numerical Analysis of Semiconductor Devices and Integrated Circuits, pp. 66-67, Colorado.

Zhang, Y., and El nokali, M., 1993, "Transient Analysis of Heterojunction Bipolar Transistors using Hydrodynamic Simulator," International Semiconductor Device Research Symposium, pp. 503-505, Charlottesville, Virginia.

Dong, X., and El nokali, M., 1992, "Two-Dimensional Numerical Simulation of GaAs MESFETs," Twenty-third Annual Modeling and Simulation Conference, pp. 891-898, Pittsburgh, PA.

Dong, X., Zhang, Y., and El nokali, M., 1992, "Modeling and Simulation of GaAs MESFETs," 35th Midwest Symposium on Circuits and Systems, pp. 1241-1244, Washington, DC.

Kushaa, A., and El nokali, M., 1992, "Modelling Subthreshold Capacitances in MOS Transistors," Solid State Electronics, vol.47, no.2, pp. 213-229.

Saleh, M., and El nokali, M., 1992, "Two-Dimensional Numerical Simulation of GaAs MESFETs," IEEE International Symposium on Circuits and Systems, pp. 1364-1367, San Diego, CA.

Banna, M., and El nokali, M., 1991, "Effect of Lateral Field Distribution on Hot-Carrier Analysis in Short-Channel MOSFETs," 34th Midwest Symposium on Circuits and Systems, pp. 799-802, Monterey, CA.

El nokali, M., and Kushaa, A., 1991, "A Subthreshold Model for the Analysis of MOS IC's," Ninth Biennial University/Government/Industry Microelectronics Symposium, pp. 169-172, Florida.

Kushaa, A., and El nokali, M., 1991, "A CAD Model for MOS Transistors Valid in All Regions of Operation," 34th Midwest Symposium on Circuits and Systems, pp. 364-367, Monterey, CA.

Kushaa, A., and El nokali, M., 1991, "Issues Related to the Modeling of MOS Transistors in Subthreshold Operation," Twenty-second Annual Modeling and Simulation Conference, pp. 921-928, Pittsburgh, PA.

Saleh, M., and El nokali, M., 1991, "A DC Model for the HEMT including the Effect of Parasitic Conduction," Ninth Biennial University/Government/Industry Microelectronics Symposium, pp. 164-168, Florida.

Saleh, M., and El nokali, M., 1991, "A DC Model for the High Electron Mobility Transistor (HEMT)," 34th Midwest Symposium on Circuits and Systems, pp. 360-363, Monterey, CA.

Saleh, M., and El nokali, M., 1991, "DC Model for High Electron Mobility Transistor," 1991 International Conference on Microelectronics, pp. 194-197, Cairo, Egypt.

Saleh, M., and El nokali, M., 1991, "The Performance of High Electron Mobility Transistors at Large Gate Voltages," Twenty-second Annual Modeling and Simulation Conference, pp. 929-936, Pittsburgh, PA.

Xia, Q., and El nokali, M., 1991, "A MODFET DC Model Based on a New Velocity-Electric Field Characteristics," International Journal of Electronics, vol.71, no.1, pp. 55-66.

Gharabagi, R., and El nokali, M., 1990, "A Charge-Based Model for Short-Channel MOS Transistor Capacitances," IEEE Transactions on Electron Devices, vol.37, no.4, pp. 1064-1073.

Gharabagi, R., and El nokali, M., 1990, "A Quasi-Static Model for the Capacitances in Short Channel MOSFETs," International Journal of Electronics, vol.68, pp. 181-193.

Gharabagi, R., and El nokali, M., 1990, "An Analytical Model for the Capacitances in Short Channel MOSFETs," Solid State Electronics, vol.33, no.2, pp. 235-242.

Xia, Q., and El nokali, M., 1990, "An Analytical DC Model for MODFETs Based on a New Three-Piece Velocity-Electric Field Characteristics," Solid State Electronics, vol.33, pp. 1179-1190.

Banna, M., and El nokali, M., 1989, "A Quasi-Two-Dimensional Model for Small-Geometry MOSFETs Including the Source/Drain Resistances," International Journal of Electronics, vol.66, pp. 589-600.

Banna, M., and El nokali, M., 1989, "A Self-Consistent Model for Short-Channel MOSFETs," International Journal of Numerical Modeling, vol.2, pp. 81-92.

Banna, M., and El nokali, M., 1989, "A Simple Analytical Model for Hot-Carrier MOSFETs," IEEE Transactions on Electron Devices, vol.36, no.4, pp. 979-986.

El nokali, M., and Gharabagi, R., 1989, "The Modeling of Capacitance in Short Channel Transistors," International Symposium on Signals, Systems and Electronics, pp. 351-354, Erlangen, West Germany.

Gharabagi, R., and El nokali, M., 1989, "A Charge-Based Model for Short-Channel MOSFET Capacitances," Colorado Microelectronics Conference, pp. 72-82.

Gharabagi, R., and El nokali, M., 1989, "A Model for the Intrinsic Gate Capacitances of Short Channel MOSFETs," Solid State Electronics, vol.32, pp. 57-63.

Gharabagi, R., and El nokali, M., 1989, "An Analytical Model for Short-Channel MOSFET Capacitances," Eighth Biennial University/Government/Industry Microelectronics Symposium, pp. 193-198, Westborough, MA.

Banna, M., and El nokali, M., 1988, "A Pseudo two dimensional Analysis of Short Channel MOSFETs," Solid State Electronics, vol.31, no.2, pp. 269-274.

Banna, M., and El nokali, M., 1988, "On the Reliability of Short Channel MOSFETs," 31st Midwest Symposium on Circuits and Systems, pp. 130-133, St. Louis, MO.

Banna, M., and El nokali, M., 1988, "Simulation of Static Characteristics and Small Signal Parameters for Short Channel MOSFETs," Nineteenth Annual Modeling and Simulation Conference, pp. 1759-1764, Pittsburgh, PA.

Gharabagi, R., and El nokali, M., 1988, "A Dynamic Model for Short Channel MOSFETs," Nineteenth Annual Modeling and Simulation Conference, pp. 1765-1769, Pittsburgh, PA.

Gharabagi, R., and El nokali, M., 1988, "A Model for Short Channel MOSFET Gate Capacitances," 31st Midwest Symposium on Circuits and Systems, pp. 126-129, St. Louis, MO.

Li, W., and El nokali, M., 1988, "CMOS Latch up Modeling: A New Approach," International Journal of Electronics, vol.64, no.2, pp. 269-282.

Banna, M., and El nokali, M., 1987, "A Pseudo two dimensional Model for Hot Carrier MOSFET," 30th Midwest Symposium on Circuits and Systems, pp. 1201-1204, Syracuse, NY.

Li, W., and El nokali, M., 1987, "A New Model for CMOS Latch up," 30th Midwest Symposium on Circuits and Systems, pp. 1197-1200, Syracuse, NY.

Li, W., and El nokali, M., 1987, "A New Model for CMOS Latch up," Solid State Electronics, vol.30, pp. 885-887.

Li, W., and El nokali, M., 1987, "Transient Analysis for a New CMOS Latch up Model," Solid State Electronics, vol.30, pp. 1331-1339.

Banna, M., and El nokali, M., 1986, "Numerical Evaluation of the Transient Pressure of a Circular Transducer Using the FFT," Seventeenth Annual Modeling and Simulation Conference, pp. 1341-1345, Pittsburgh, PA.

Banna, M., and El nokali, M., 1986, "On the Transient Response of a Circular Transducer," Wave Motion, pp. 235-241.

El nokali, M., 1986, "The Modeling of Saturation in MOS Transistor," 29th Midwest Symposium on Circuits and Systems, pp. 140-149, Lincoln, NE.

El nokali, M., and Miranda, H., 1986, "A Simple Model for the MOS Transistor in Saturation," Solid State Electronics, vol.29, pp. 591-596.

Miranda, H., and El nokali, M., 1986, "A Simple Model for Short Channel MOSFETs in Saturation," Seventeenth Annual Modeling and Simulation Conference, pp. 1307-1310, Pittsburgh, PA.

Miranda, H., and El nokali, M., 1986, "A Simple Two Sections Model for Short Channel MOS Transistors in Saturation," International Journal of Electronics, vol.61, no.4, pp. 49-458.

Miranda, H., and El nokali, M., 1986, "A Simple Two Sections Model for Short Channel MOSFETs in Saturation," 29th Midwest Symposium on Circuits and Systems, pp. 150-153, Lincoln, NE.

El nokali, M., 1985, "Theory of the PN Diode SAW Storage Correlator in the Flash Mode," IEEE Transactions on Sonics and Ultrasonics, Special Issue on SAW Convolvers and Correlators, pp. 235-241.

El nokali, M., 1984, "Analysis of the Gap Coupled PN Diode Array LiNb03 Storage Correlator in the Flash Mode," 1984 IEEE Ultrasonics Symposium, pp. 147-151.

El nokali, M., and Adler, E.L., 1984, "Analysis of the SAW Schottky Diode Storage Correlator in the Flash Mode," IEEE Transactions on Sonics and Ultrasonics, no.SU-31, pp. 5-10.

El nokali, M., and Adler, E.L., 1983, "Analysis of the SAW Schottky Diode Storage Correlator in the Flash Mode," 1983 IEEE Ultrasonics Symposium, pp. 387-391.

El nokali, M., and Adler, E.L., 1980, "A Modified Theory for SAW Correlators," IEEE Transactions on Sonics and Ultrasonics, no.SU-27, pp. 38-42.

El nokali, M., and Adler, E.L., 1979, "Charge Storage in SAW Memory Correlators," Electronics Letters, vol.15, p. 323.

El nokali, M., and Adler, E.L., 1977, "A Simplified Theory for Semiconductor Coupled Surface Wave Convolvers," IEEE Transactions on Sonics and Ultrasonics, no.SU-24, pp. 218-221.