Pitt | Swanson Engineering
Prof. John Barnard
Mechanical Engineering & Materials Science
Barnard, John
Office: 636 Benedum Hall
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PhD in Metallurgical Engineering and Materials Science, Carnegie Mellon University, 1987

ME in Metallurgical Engineering and Materials Science, Carnegie Mellon University, 1985

BS in Engineering and Applied Science, Harvard University, 1981

Gorr, H.M., Zueger, J.M., and Barnard, J.A., 2012, "Lysozyme Pattern Formation in Evaporating Drops," Langmuir, vol.28, pp. 4039-42.

Li, F., Leo, P.H., and Barnard, J.A., 2008, "Temperature-dependent formation of dendrimer islands from ring structures," J. Phys. Chem, no.Volume B112.

Li, F., Thaler, S.M., Leo, P.H., and Barnard, J.A., 2006, "Dendrimer pattern formation in evaporating drops," J. Phys. Chem., no.Volume B110, pp. 25838-25843.

Xu, F.T., Thaler, S.M., Lopez, C.A., Barnard, J.A., Butera, A., and Weston, J.L., 2005, "Stable Charge Storage in Granular Thin films (074105)," Appl. Phys. Lett., vol.86.

Gomez, J., Butera, A., and Barnard, J.A., 2004, "Surface anisotropy and resonance modes in Co-SiO2 heterogeneous films (054428)," Phys. Rev. B, vol.70.

Wei, G., Gong, J., Zangari, G., Weaver, M.L., and Barnard, J.A., 2003, "Thin CNx overcoats deposited using various sputtering gases," J. Appl. Phys., vol.93, pp. 8710-12.

Chumakov, D., Schafer, R., Elefant, D., Eckert, D., Schultz, S., Yan, S., and Barnard, J.A., 2002, "Magnetization process in Sm40Fe60 (88 nm)/Ni80Fe20 (62 nm) exchange spring films (134409)," Phys. Rev. B, vol.66.

Liu, W.J., Zhou, J.N., Rar, A., and Barnard, J.A., 2001, "X-Ray Reflectivity and Nanotribological Study of Deposition-Energy-Dependent Thin CNx Overcoats on CoCr Magnetic Films," Appl. Phys. Lett., vol.78, pp. 1427-29.

Klemmer, T.J., Inturi, V.R., Minor, M.K., and Barnard, J.A., 1997, "Exchange Induced Unidirectional Anisotropy Observed Using Cr-Al Antiferromagnetic Films," Appl. Phys. Lett., vol.70, pp. 2915-17.

Viala, B., Minor, M.K., and Barnard, J.A., 1996, "Microstructure and Magnetism in FeTaN Films Deposited in the Nanocrystalline State," J. Appl. Phys., vol.80, pp. 3941-56.